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Silicon die stacking with low-volume interconnections is an attractive method for 3D integration. It offers such benefits as extension to fine-pitch integration, increased vertical heat transfer and hierarchy for repeated thermal processes without re-melting. The process uses low-volume solder to form joints of few microns high. The low-volume solder mostly forms intermetallic compounds with underlying...
We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability...
A metal-ferroelectrics-semiconductor (MFS) capacitor with a ferroelectric polymer as a gate dielectric has recently attracted much interest owing to its potential applications in nonvolatile memory. In order to understand switching dynamics, we performed simultaneous measurements of the charge Q and the capacitance C for Au/vinylidene fluoride- trifluoroethylene (VDF-TrFE) /n-Si structure using a...
We study the enhanced light emission from a silicon slab with a photonic crystal nanocavity. We find that phonon accumulation in the tiny space is a key for enhanced light emission in addition to the cavity effect for photons.
The D-source, which ensures beam current increase in the LEX series, SEN's high current batch-type implanter, has been developed for productivity improvement or COO reduction. The D-source can achieve beam current increase dramatically only by replacing the original source. Moreover, the D-source has longer source life time with easier maintenance. Performance of the D-source was reported in this...
We propose a novel technique of "Luminoscopy" in which the deficiencies in the cells and modules can be clearly detected by photographic surveying of electroluminescence (EL) without any probing tools. Under the forward bias condition, the cell emits infrared light (lambda=1100 to 1200 nm), whose intensity reflects the number of minority carriers in p-type layer. The EL intensity distribution...
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