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This paper stresses on critical requirements for characterizing device inherent intermodulation distortion (IMD) products in power HEMTs for 3G wideband applications. An accurate broadband RF testbench is essential for reliable nonlinearity measurements. With the optimized IMD characterization testbench, the reproducibility of sweet-spot behavior in GaAs and GaN HEMT technologies has been investigated...
For the first time, optical phase control of a hybrid heterojunction bipolar transistor (HBT) oscillator has been achieved. The results strongly indicate that the HBT is a suitable device for optically controlled oscillators. At a frequency of oscillation of 500 MHz a locking range of more than 15 MHz was measured ( Delta f/f equivalent to 3%). The optical tuning range of the oscillator exceed 25...
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