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In this letter, we report the first demonstration of a 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) with its p-layer formed by Al implantation. In order to alleviate the electric field crowding around mesa edge, an appropriately doped p sub-layer with high lateral resistance is added beneath the top p+ contact layer, which are both formed by Al implantation into a lightly doped n-SiC layer...
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