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In this letter, we demonstrated a novel approach to effectively improve the reliability of amorphous carbon (a-C) memory via the insertion of a thin nanoporous TiOxNy layer between the top electrode and the a-C. Owing to the nanoporous structure of TiOxNy, Ag atoms could migrate into the film during the Ag electrode evaporation process, resulting in a pre-formed Ag tip inside the TiOxNy layer. The...
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