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Photoelectric memristor has attracted many attentions thanks to their promising potential in optical communication chips and artificial vision systems. However, the implementation of an artificial visual system based on memristive devices remains a considerable challenge because most photoelectric memristors cannot recognize color. Herein, multi‐wavelength recognizable memristive devices based on...
In article number 1803970, Xiaoning Zhao, Haiyang Xu, and co‐workers achieve a biocompatible resistive switching memory with pectin extracted from natural orange peel. The memory with flexible and multilevel characteristics is designed to dissolve rapidly in deionized water, which possesses promising potential to be applied in high‐density secure storage systems, flexible electronics, and green electronics...
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with the transient feature can also be developed as secrecy information storage systems besides the above advantage. Resistive switching (RS) memory is...
Graphene oxide (GO)‐based resistive‐switching (RS) memories offer the promise of low‐temperature solution‐processability and high mechanical flexibility, making them ideally suited for future flexible electronic devices. The RS of GO can be recognized as electric‐field‐induced connection/disconnection of nanoscale reduced graphene oxide (RGO) conducting filaments (CFs). Instead of operating an electrical...
In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory...
We demonstrate a forming-free electrochemical metallization resistive memory device (Ag/TiOxNy/Pt) based on the nanoporous titanium oxynitride (TiOxNy) thin film. Due to the nanoporous structure of TiOxNy, Ag atoms can migrate into the film during the Ag electrode evaporation process, resulting in a pre-formed Ag conductive filament inside the switching layer. This is responsible for the forming-free...
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