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In this paper, a quantum-mechanical threshold voltage model for ultrathin double gate-all-around DGAA MOSFETs has been developed by solving three-dimensional (3-D) Poisson's and 2-D Schrödinger's equations in the channel region. The parabolic potential approximation is considered for Poisson's equation solution, whereas a hollow cylindrical potential well in the channel region is assumed to solve...
Design and development of a 14.25 GHz to 57 GHz frequency quadrupler has been presented in this paper using GaAs/InGaAs/AlGaAs based pseudomorphic High Electron Mobility Transistor (pHEMT) in a single-stage, Monolithic Microwave Integrated Circuit (MMIC). Fabricated MMIC chip has achieved 5.2 dB of conversion loss at 57 GHz for 0 dBm of input power at 14.25 GHz. Saturated output power is −4.5 dBm...
This paper shows how a seven level MLI can be implemented using lower number of switches using gate drive circuits built with low cost gate drive ICs such as IR2110 family. The technique uses a single dc power supply to feed all the gate drives of an inverter. This type of implementation reduces the total cost of implementation of seven-level MLI and size of driver circuits. Another important feature...
This paper presents an analytical direct gate tunneling current model of recessed-source/drain(Re-S/D) SOI MOSFET. The gate tunneling current behavior has been analyzed by varying different parameters like gate insulator thickness and drain to source voltage. The gate tunneling current has been investigated with the effect of high-k dielectric constant. 2D ATLAS tool has been used to validate the...
Wireless Sensor Network (WSN) is one of the emerging technological fields due to recent advancements and area of research. The WSN is collection small sensor nodes, which are battery driven and have very less power. Recent research area of WSN focuses on energy consumption, routing, QoS, bandwidth, packet loss etc. This paper focuses on comparative analysis among various existing routing protocols...
In this paper we presents the algorithms for I-V measurements of the diode and FET devices using Keithley® instruments. The data from the I-V measurements was acquired and processed according to the proposed characterization algorithms. The characterization algorithms were used in the extractions of transconductance coefficient, threshold voltage and lambda parameters. The instrument setup and algorithms...
This paper presents an approach to realize very high value of resistance through well to source connected PMOS devices working in weak inversion. The derivations of formulas were based on the concept of EKV equation at weak inversion. Analysis has been done to correlate conductance with the biasing voltage. The developed approach has been applied to the design of high resistance circuit for Piezo-electric...
This paper presents an efficient and scalable framework called Reliable and Energy Efficient Framework (REEF) for reliable data collection in Wireless Sensor Networks. REEF employs a distributed scheme which enables it to scale to large networks. It partitions the network in to clusters where the node with highest residual energy in a neighborhood become the cluster head. REEF forms a virtual backbone...
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