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A multiquantum well (MQW) double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si/3C-SiC material system has been proposed for high frequency application. One symmetrical and two asymmetrical doping profiles for the proposed hetero-structure device are considered in the present study. The design and optimization of the abovementioned three doping profiles of SÌ/3C-SÌC MQW...
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