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A lattice-matched In0.53Al0.22Ga0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm2, along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base...
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