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Summary Reverse annealingof radiation damage in silicon bulk has been studied with emphasis on its implications on LHC experiments. Predictions were shown to depend critically on the model used for reverse annealingdynamics. A set of 8p+-n-n+ pad detectors was irradiated with neutrons to fluences from 2 × 1013 to 2 × 1014 n/cm-2. Time-development of defects at 20 °C for 100 days...
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