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Vertically self-aligned gallium nitride nanorod arrays grown by plasma-assisted molecular-beam epitaxy are shown to behave as subwavelength optical media in both their discrete and integrated forms, which have important implications for optoelectronic applications.
Thermal noise caused by source parasitic impedance (Rs) is one of the most important noise mechanisms in AlGaN/GaN HEMTs. A physical based frequency dependent Rs model is proposed. This model has been implemented in the PUCEL model for validation purpose, and the results show that the minimum noise figure (Fmin) of an AlGaN/GaN HEMT is not linear but nonlinear against frequency.
Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the...
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