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At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade. As the end of this decade is approaching it can be noted that only one of the proposed...
A 90 nm embedded PCM technology is presented. For the first time the storage element has been integrated in a 6-ML advanced CMOS platform, exploiting the LV n-mos device as cell selector. Very good cell working window and intrinsic reliability both for storage element and selector MOS have been proven. The full integration of a 4 Mb ePCM macrocell with very few additional masks and minimal process...
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