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E-Beam inspection (EBI) is widely applied as in-line defect monitoring tool for 14nm semiconductor manufacturing fabs. Failure mechanisms can be identified by cross-sectioning on the specific defect detected by EBI. Dark voltage contrast (DVC) and bright voltage contrast (BVC) are two typical types of e-Beam defects. In real practice, it is much easier to validate DVC signal due to its obvious detectability...
E-Beam inspection (EBI) is widely applied as inline defect monitoring tool for 14nm semiconductor manufacturing fabs. Failure mechanisms can be identified by cross-sectioning on the specific defect detected by EBI. Dark voltage contrast (DVC) and bright voltage contrast (BVC) are two typical types of e-Beam defects. In real practice, it is much easier to validate DVC signal due to its obvious detectability...
E-beam inspection has become more critical to rapid yield learning in semiconductor manufacturing, especially for 20nm-and-below nodes where defect dimensions shrink to levels below traditional bright field (BF) or dark field (DF) inspection capabilities. With increasing inspection capacity needs for high-volume manufacturing, multiple e-Beam tool sets are required for in-line monitoring. It is necessary...
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspection is performed after the tungsten chemical mechanical planarization (W CMP) step. In-line transmission electron microscope (TEM) samples at select...
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