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Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The structures enable a direct comparison to be made between a SGT and a standard thin-film field-effect transistor (FET) on the same device. SGTs having excellent characteristics have been fabricated, with intrinsic gains approaching 10,000. The effects of bulk doping in the polysilicon and of the source barrier...
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