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Proton irradiation effects on fin-type field effect transistors (FinFETs) are examined from the viewpoint of their electrical-performance parameter of mobility. They are fabricated with various types of combination of strain/stress techniques to control their mobilities. The base stress level is globally modified by means of nonstrained or strained silicon-on-insulator wafers. Some process splits,...
The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel...
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