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The focus of the present study is the optical characterisation of the novel direct band gap material Ga(NAsP) monolithically grown on Si substrate. Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures (MQWHs) were deposited by low temperature metal organic vapour phase epitaxy (MOVPE) in a commercial reactor system on nominally exact (001) Si substrates. In order to realise III/V laser diode the...
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