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AlGaAs/GaAs HBTs with carbon-doped bases are grown by conventional low-pressure MOCVD using trimethylarsine as the carbon source for the first time. The obtained current gain values of 100 for 5*10/sup 18/ cm/sup -3/ base doping and 40 for 1*10/sup 19/ cm/sup -3/ base doping reveal the feasibility of trimethylarsine as a p-type dopant source for MOCVD growth.<<ETX>>
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