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The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered...
This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer...
Molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ∼1.8 eV for single layers. Its bandgap allows for high Ion/Ioff metal-oxide semiconducting field-effect transistors (FETs). Exfoliated monolayer MoS2 FETs exhibit current saturation with on-state current densities of 300 µA/µm, as well as transconductances exceeding...
Ion-Sensitive Field-Effect Transistor (ISFET) is a popular potentiometric chemical/bio-chemical sensor. However, due to charge screening, the sensitivity of the device is significantly reduced. A logarithmic dependence is exhibited between the charge present at the electrolyte-insulator interface and the charge mirrored in the conducting channel, which limits the sensitivity of an ideal conventional...
This paper is intended to report design methodology and implementation experiments of solid state based triggering arrangement for MARX generator of KALI-5000 (1MV, 40kA, 100nS) pulsed power system. The 15 stage bipolar MARX generator of KALI-5000 system is triggered using three triggered sparkgaps. An IGBT based trigger supply is used to trigger the first spark gap and consecutive two sparkgaps are...
A 32 nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32 nm or 28 nm logic technology. NMOS drive currents are 1.62 mA/um Idsat and 0.231 mA/um Idlin at 1.0 V and 100 nA/um Ioff. PMOS drive currents are 1.37 mA/um Idsat and 0.240 mA/um Idlin at 1.0 V and 100...
The Internet has revolutionized communication, education, commerce and information access for its users worldwide. Unfortunately, the lack of copper/fiber infrastructure in the rural areas of the developing world has prevented a large majority of the human population from reaping the benefits of the Internet. While the number of mobile subscribers in the developing world has more than quadrupled in...
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