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In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10-4 ω-cm...
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