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Osteonecrosis of the femoral head (ONFH) is recognized as a common refractory orthopedic disease that causes severe pain and poor quality of life in patients. Puerarin (Pue), a natural isoflavone glycoside, can promote osteogenesis and inhibit apoptosis of bone mesenchymal stem cells (BMSCs), demonstrating its great potential in the treatment of osteonecrosis. However, its low aqueous solubility,...
Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single‐crystalline GaN film on WS2‐glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice...
Semiconductors
In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co‐workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single‐crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.
Spontaneous Lattice Inversion
In article number 2200057, Zhiqiang Liu, Shenyuan Yang, Yong Zhang, Peng Gao, and co‐workers confirm the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion. Furthermore, a vertical 2D electron gas is revealed at the...
The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted,...
The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals...
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