The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report the fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with high breakdown voltage by employing the metal-insulator-semiconductor (MIS) gate structure. SiO 2 , SiN, and TiO 2 were used for the insulators. The gate leak current was significantly reduced by employing the MIS structure, and the breakdown voltage characteristics were improved. The breakdown voltage...
The use of n-Al x Ga 1-x As an emitter ballast layer material for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed and demonstrated. A high thermal coefficient of resistance can be obtained owing to the temperature dependence of the relative populations of the conduction band , L and X valleys if the Al mole fraction x of the n-Al x Ga 1 ...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.