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Magnetic tunnel junctions (MTJ) having a MgO barrier are envisioned for many important applications including magnetoresistive random access memory, hard disk read heads and magnetic sensors. Because of their high Curie temperatures, large spin polarization and small magnetic damping, half-metallic Heusler alloys integrated into MTJs may be optimal for use in low power and high output spin-electronic...
Heusler Alloys Co FeSi and Co MnSi were deposited on both single crystal MgO (100) and polycrystalline SiO silicon thermal oxide substrates and characterized by x-ray diffraction before and after thermal annealing at various temperatures. Co FeSi and Co MnSi deposited on MgO (100) grow as L2 or B2 structures but grow as an A2 structure on the SiO substrate. Co FeSi...
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