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In this work, monolithic three‐dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large‐scale n‐MoS2 and p‐MoTe2 grown by the chemical vapor deposition method. In the CMOS device, the n‐ and p‐channel field‐effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO2 is used as the gate dielectric. An Al2O3 seed layer...
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