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A gallium-doped ZnO (GZO) layer was investigated and compared with a conventional indium-tin-oxide (ITO) layer for use as a cathode in an inverted polymer solar cell based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C 61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ). By modifying the GZO cathode with a ZnO thin layer, a high power conversion efficiency (3.4%) comparable to...
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