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In order to investigate the luminescence properties of Er 3+ in 3C silicon carbide (SiC), erbium (Er) ions were implanted into n- and p-type 3C SiC on Si and characterized by photoluminescence (PL) measurements. We found that the optimum annealing temperature was 1350°C. We consider that the decrease in PL intensity at 1400°C is caused by melting of Si substrate due to annealing at temperatures...
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