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Recently long-channel PMOS transistors are being used in delay circuits to increase delay time. Negative Bias Temperature Instability (NBTI) has channel length dependency which shows that long-channel devices degrade more than short channel devices. We suggest a source underlap structure with short channel transistor to solve this problem. We confirmed the short-channel device with underlap structure...
We have successfully grown pure and Pr3+-doped NaGd(WO4)2 (NGW) single crystals using the Czochralski pulling method. By employing a suitable rotation and pulling rates, good quality crystals of pure and Pr3+-doped NGW have been grown from the solution melt. Structural analyses of the grown samples are studied by X-ray diffraction (XRD). The x-ray induced emission spectrum shows a broad emission band...
MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely high...
This paper proposes an isolation-improvement technique for a MIMO antenna in small portable devices, by utilizing a one-dimensional electromagnetic bandgap (1-D EBG) and folded slot structures. Since the 1-D EBG structure provides in-phase reflection properties, and the folded slot structure acts as a decoupling resonator due to dissipation of radiated energy, mutual coupling among the antenna elements...
There are two methods for earthquake engineering as an application of acoustic metamaterials. One is the traditional cloaking method that makes the seismic wave deflect the building to be protected. The other is the artificial shadow zone method that makes the seismic wave disappear by attenuation. We will explain the fundamental principles of the two methods and compare the advantages and disadvantages...
In this study, we investigate the use of a Fuzzy C-Means Clustering based Neural Network (FNN) classifier in problems of emotion classification. The proposed classifier model consists of three layers, namely, input, hidden and output layers. Here, fuzzy c-means clustering method, two types of polynomial and linear combination function are used as a kernel function in the input layer, the hidden layer...
The target surface of divertor takes high heat flux from plasma in fusion reactor. Removal of heat generated on the surface of divertor is one of the most difficult problems that should be solved for realization of fusion reactor. Besides, high temperature heat transfer medium should be collected for the efficient utilization of energy. This study analyzed thermal conduction behavior of composite...
The authors have proposed a new divertor concept using SiC composite with directional high thermal conductivity enhanced with fiber as substrate of the divertor structure in fusion reactor. In this study, unidirectional SiC composite with pitch-based carbon fibers (UD-Cf/SiC) was fabricated as the model material. The thermal conductivity (or thermal diffusivity) in directions parallel (0°), inclined...
A benzene gas sensor was developed base on the gated lateral bipolar junction transistor (BJT) coupled with solvatochromic dye in this study. The gated lateral BJT which combined a metal-oxide-semiconductor field effect transistor (MOSFET) and a BJT was used as the main part of the device. The 4-amino-N-methylphthalimide (4-ANMP) dye as a kind of solvatochromic dye with charge-transfer (CT) characteristic...
We developed a miniaturized lensless fluorescence imaging device for digital counting of micro-droplet chamber array, which is used in single molecule detection. Fluorescent beads in a droplet array were imaged with the device and its resolution was improved by using deconvolution method.
Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.
In this paper, we presents 20-nm-channel length (Lch) high performance InAs-on-insulator (-OI) MOSFETs on Si substrates with Ni-InGaAs metal source/drain (S/D) employing a new contact resistance reduction technology. The devices provide high maximum on-current (Ion) and maximum transconductance (Gm) of 2.38 mA/µm and 1.95 mS/µm at drain voltage (VD) of 0.5 V. This high performance is attributable...
We report the first demonstration of strained In0.53Ga0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In0.53Ga0.47As-OI structures were successfully fabricated on Si by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1...
We report a multi nozzle electrohydrodynamic (EHD) printing head by using batch fabrication for the first time. Inks can be ejected from a glass nozzle by applied large electric field. Tiny nozzles with a outer diameter of 100 microns are fabricated by sand blasting on a glass wafer. A stable continuous jetting with a commercial carbon black ink was observed. Continuous lines with a width of 30 microns...
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n- and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this paper,...
A new class of microwave power module (MPM) is being developed for phased antenna array applications. The MPM consists of a compact S-band 1 kW traveling-wave tube (TWT), a solid-state pre-amplifier, and a power supply. The proposed S-band MPM provides tenfold peak power increase compared to state-of-the art S-band MPMs. The TWT amplifier is driven by a 6 kV, 0.9 A electron beam. A depressed collector...
From 2011, the Pohang Accelerator Laboratory (PAL) had started the 10 GeV PAL-XFEL project. The PAL-XFEL needs a highly stable electron beam. The very stable beam voltage of a klystron- modulator is essential to provide the stable acceleration field for an electron beam[1]. Thus, the modulator system for the XFEL requires less than 50 ppm PFN voltage stability. To get this high stability on the modulator...
We report the first demonstration of sub-60 nm deeply-scaled InGaAs- and InAs-on-insulator MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). The devices provide 400 % Ion enhancement, when comparing to that of an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement...
GaSb has stirred a significant interest over the recent years, due to its high bulk electron/hole mobility and optoelectronic properties [1]. Particularly, the high hole mobility makes GaSb one of the III–V materials promising for p-MOSFETs and fully-integrated CMOS applications. However, the device technologies for GaSb MOSFETs have not been fully developed yet. In this work, we address a novel formation...
We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm2 at 1040...
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