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HfO2-based resistive RAM (RRAM) devices have received intensive research attention in the recent years. Most of the HfO2-based RRAM system demonstrates promising performance in bipolar mode. However, HfO2-based RRAM devices in unipolar mode so far, still suffers from low endurance (<;500 cycles), and non-integratable electrode materials such as Pt or Au. In this work, CMOS-compatible Ni-containing...
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