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Shallow arsenic implantation distributions and narrowly spaced antimony delta markers in silicon were used to explore near-surface changes of the sputtering yield under ultra-low-energy Cs + bombardment (0.25-1keV) at impact angles θ between 0 o (normal incidence) and 60 o , i.e. below the critical angle for ripple formation. In all cases, the profiles were found to be shifted...
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