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Al 0.3 Ga 0.7 As (10 nm) (5 nm) 0.3 Ga 0.7 As (10 nm) double barrier resonant tunneling diodes (RTDs) have been fabricated on a (411)A GaAs substrate by molecular beam epitaxy (MBE), which has atomically flat GaAs 0.3 Ga 0.7 As interfaces over a device area. The (411)A RTDs showed a larger...
Electrical characteristics of epitaxial layers which are supplied by three manufacturers for molecular beam epitaxy (MBE) grown wafers and two manufacturers for metal organic chemical vapor deposition (MOCVD) grown wafers are analyzed. There are remarkable differences in the electrical characteristics between the MBE grown epitaxial-layers and the MOCVD grown ones. The heterojunction field effect...
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