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Single-crystal SrTiO 3 has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO 3 /Si interface. A regrowth of an amorphous interfacial layer as thick as 23 9 has been observed and identified as a form of SiO x . This is a direct result of an internal oxidation during...
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