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Electrical resistivity of poly(3-methylthiophene) doped with PF 6- has been studied under pressure up to 13 kbar using a self-clamped beryllium-copper pressure cell. Application of the pressure induces a metallic temperature dependence in resistivity at low temperatures. Below about 4 K, T 1/2 dependence in electrical conductivity was observed, which can be explained...
We have studied the transport properties in polythiophene doped with PF 6- . The intrinsic transport properties inherent in the crystallized regions were abstracted from the precise experiments of the d.c. resistivity p dc (T), voltage-shorted-compaction (VSC) resistance ratio r VSC (T) and absolute thermoelectric power S(T) as a function of temperature...
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