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Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 10 10 to 10 9 cm -2 is observed for LT-AlN interlayers which can be further improved using monolayer...
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