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We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The IDS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low- (2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under...
In recent years, wireless systems have rapidly evolved due to the increasing demands of different services, functionalities, and applications. In order to provide high-speed connectivity while using the available spectrum in an efficient manner, wideband digitally modulated signals are increasingly used to transmit information.
In this work, measurements of the high frequency as well as the low frequency response of a non-linear microwave circuit are reported. The developed set-up is based on an extension of the LSNA and it enables the simultaneous measurement of baseband response and RF behaviour. Thanks to this capability a direct correlation between the variation of baseband impedance and asymmetry of distortion components...
There is a clear tendency to develop upcoming telecommunication applications at increasing RF carrier frequencies. To enable realistic characterizations of RF building blocks, the use of a vector signal generator, enabling modulated excitations, is indispensable. This paper presents an inexpensive way to extend the RF bandwidth of a commercial vector signal generator. The developed set-up consists...
This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
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