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A buried hexagonal YSi 1.7 layer is formed by channelled implantation of Y ions into (1 1 1) oriented silicon wafers. The orientation relationship between the epitaxial YSi 1.7 and the silicon is (0 0 0 1) YSi1.7 (1 1 1) Si with <1 1 2 0> YSi1.7 <1 1 0> Si . Annealing...
A metal vapour vacuum arc (MEVVA) ion source is used for the fabrication of a γ-Fe 1−x Ni x Si 2 (x ≈ 0.4) layer via the sequential implantation of Ni and Fe into (100) oriented silicon (Si) substrate. After annealing at 500°C for 30 min, a “Fe 0.6 Ni 0.4 Si 2 /Fe 0.4 Ni 0.6 Si 2 /Si” structure appears. The Fe-rich Fe 0.6...
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