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Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2times10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than...
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