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A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO 2 , a down/up capacitive ratio close to 200 is achieved with 8V pull-in. It is also demonstrated that, using a passivated-surface HRS...
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