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Silicon oxide films deposited by Ar-H 2 sputtering exhibited significantly smaller internal stresses than conventional films deposited by Ar-O 2 sputtering. This phenomenon was found to be caused by the introduction of Si-H bonds into the Si-O-Si network structure. As a result of hydrogenation, the number of planar ring type defects in the network was successfully reduced, and the...
Thick Si/SiO 2 multilayered films with flat interfaces are needed to achieve optical devices with low optical propagation losses, such as a laminated polarization splitter operating at a 1 550 nm wavelength. Such films can be realized by a sputtering method using an Ar/H 2 gas mixture because of the successful reduction of internal stress and surface roughness of films compared with...
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