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Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters.
The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few...
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