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Cu-doped AlN (Cu:AlN) thin films were deposited on non-ferroelectric substrate (Si (111)) and ferroelectric substrates (LiTaO3 and LiNbO3) by direct current reactive magnetron sputtering. It was discovered that all the deposited Cu:AlN thin films showed room temperature ferromagnetism and the average magnetic moment (AMM) per Cu atom of the film increased with the decrease of the angle (θ) between...
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