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High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) all-optical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.
Novel active MMI bi-stable laser diodes are proposed and demonstrated. Using partly saturable-absorber configuration in active MMI, extremely wide hysteresis window of 94mA was achieved with 30fJ optical switching energy in 335??m total device length.
Integrated 4-bit (355 times 1200 mum2) optical memory elements, using novel active multi-mode-interferometer bi-stable laser diodes, showed single, common and low operation current (55 mA) with uniform characteristics.
Integrated optical RAM showed extremely wide and uniform hysteresis windows of 32 mA plusmn 2 mA (with operation current around 70 mA) using novel active MMI-BLD, with relatively high ON/OFF ratio of 18 dB in 315 times 600 mum2 total device size.
A novel MMI-based bi-stable laser is proposed for realizing compact size. Relatively low operation current of 100 mA (8 mA hysteresis), and high ON/OFF optical power-ratio of 15 dB were successfully achieved (@L=550 mum).
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