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We investigate the spatial and angular lateral shifts of a Gaussian light beam reflected from a structure consisting of a nematic liquid crystal cell sandwiched between semi-transparent indium-tin oxide electrodes and deposited on a magneto-electric yttrium-iron garnet film grown on a non-magnetic dielectric gadolinium-gallium garnet substrate. We show that the external voltage applied to the liquid...
This paper is devoted to the research of possibilities of applying of the magnetoelectric material as the sensing element of a crankshaft position sensor. Proposed magnetoelectric crankshaft position sensor would have several advantages against the traditional sensors such as smaller size and weight. Magnetostrictive-piezoelectric layered structure based on piezoceramic PZT plate with dimensions 0...
This paper presents a modelling of the microwave antenna based on multiferroic layered structures. The multiferroic layered structures consist of a double layer of an yttrium-iron garnet film 5 µm in thickness, which is epitaxially grown on a gadolinium-gallium garnet substrate 500 µm in thickness, and a lead zirconate titanate film 5 µm in thickness. The development of such antennas enables us to...
We investigate theoretically the Goos-Hänchen shift of a Gaussian light beam reflected from a magneto-photonic heterostucture consisting of an electrooptic film, a magneto-electric film, and a nonmagnetic dielectric substrate. We show that the magneto-electric coupling increases up to several times the amplitude of the Goos-Hänchen shift of a p-(s-) polarized incident beam reflected into a s-(p-)...
The magnetoelectric behaviour of a dual-phase magnetostrictive-piezoelectric cantilever is discussed in this article. The cantilever is formed by magnetostrictive-piezoelectric bilayer clamped by a shaker. Applied magnetic field of 10 Oe and shaker acceleration of 0.02 g induce the approximately equal output voltage of 15–30 V.
This paper presents the construction and operating principle of current sensors based on low frequency magnetoelectric effect. Sensors presented here were designed for detecting the direct currents from 0 to 1 A and to 5 A. The sensitivity of the 1 A magnetoelectric current sensors is more than 3 V/A. Sensor's current consumption is about 2.6 mA.
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