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Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models)...
This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning range is achieved thanks to an original device design which features suspended-meander arm inductance with zipping capacitive coupling enabling a...
This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation voltage of 22 V) has been fabricated and successfully measured in a wide range of frequencies (1-14 GHZ), achieving a true-time delay of 25 ps. Experimental...
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