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An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In0.34Ga0.66As/5-nm GaAs0.25Sb0.75 quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm2 under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 × 108...
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