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We compared three software tools designed for scattering-parameter measurement uncertainty evaluation. These tools propagate uncertainty to calibrated S-parameters by means of a sensitivity analysis. We also validated the sensitivity analysis with Monte-Carlo simulations performed with one of the software tools and the Keysight ADS circuit simulator.
Modelling at gigahertz frequencies is often based on (non)linear microwave/millimeter wave measurements. These measurements are usually considered ideal in modelling procedures. In this work, we demonstrate how measurement uncertainty may impact model extraction in two application areas: biofluidic modelling and large-signal transistor modelling.
We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the...
Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters.
The manuscript presents a comparison between nonlinear and linear de-embedding procedures for the identification of the I/V dynamic characteristics at the transistor current-generator plane. These approaches, without the need for modeling device trapping and thermal effects, allow to retrieving the waveforms of the electrical quantities at the current generator that governs device performance in terms...
In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied...
This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The IDS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low- (2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under...
The I-V dynamic characteristics of field-effect-transistors (FET) are determined through a nonlinear deembedding procedure at the current generator plane. More precisely, the knowledge of the parasitic elements and the nonlinear charges allows one to retrieve the intrinsic I-V functions starting from any experimental high-frequency load line. In this work, the nonlinear charge functions (Q-V) and...
In this work the low-frequency dispersion affecting active devices is experimentally characterized by performing on-wafer vector large-signal measurements at different substrate temperatures. As a result, the influence of the thermal effects and traps can be clearly highlighted under different operating frequencies. Particularly, active load pull measurements are performed both at low- and high-frequency...
In recent years, wireless systems have rapidly evolved due to the increasing demands of different services, functionalities, and applications. In order to provide high-speed connectivity while using the available spectrum in an efficient manner, wideband digitally modulated signals are increasingly used to transmit information.
This work presents an experimental study of the low-frequency dispersion which impairs the performance of microwave active solid state devices. By exploiting low-frequency large-signal excitations (< 10 MHz), the dynamic behaviour of the drain-source current generator is highlighted as function of the operating bias condition and frequency. In order to assess the capability of the proposed investigation...
In this work a de-embedding technique oriented to the determination of FET I-V dynamic characteristics is reported. It exploits high-frequency large-signal measurements and a model based description of the reactive nonlinearities. The proposed technique allows one to gather information about the intrinsic I-V dynamics, including traps related dispersion and thermal phenomena, directly from high-frequency...
An experimental investigation of the low-frequency dispersion affecting the behaviour of microwave devices is reported in this work. The study has been carried out by exploiting two different measurement techniques and experiments have been performed on a GaN based HEMT. In particular, bias and frequency dependence of dynamic characteristics has been clearly observed. Moreover, asymmetric behaviour...
A comparison between two different, yet analytical approaches for lookup-table large-signal model construction is presented in this study. Both approaches use the same linear (small-signal) model as the starting point to construct the large-signal model. The first nonlinear model employs the charge- and current-sources to represent the nonlinearity of the active part of the device where the extended...
This paper presents a snapshot of key large-signal network analysis capabilities enabling state-of-the-art microwave device characterization. An overview of different large-signal network analyzer configurations with the source- and load-pull techniques is given. Next, we report on the modulation capabilities that allow the characterization of high- and low-frequency effects which occur typically...
The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few...
A novel set-up extending Large Signal Network Analyzer (LSNA) capabilities is described in this work. The new set-up allows the simultaneous on-wafer measurement of high-frequency response (600 MHz-50 GHz) and currents/voltages induced at low-frequency scale (10 kHz-24 MHz) when the nonlinear DUT is excited by a periodic modulated signal. Experiments carried out on FinFET devices are reported. It...
In this work, measurements of the high frequency as well as the low frequency response of a non-linear microwave circuit are reported. The developed set-up is based on an extension of the LSNA and it enables the simultaneous measurement of baseband response and RF behaviour. Thanks to this capability a direct correlation between the variation of baseband impedance and asymmetry of distortion components...
There is a clear tendency to develop upcoming telecommunication applications at increasing RF carrier frequencies. To enable realistic characterizations of RF building blocks, the use of a vector signal generator, enabling modulated excitations, is indispensable. This paper presents an inexpensive way to extend the RF bandwidth of a commercial vector signal generator. The developed set-up consists...
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