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Given low interface trap densities and low access resistances, InGaAs MOSFETs can provide greater on-state current than silicon MOSFETs at the same effective oxide thickness (EOT), and are thus strong candidates for use in VLSI.1 Transconductance as high as 2.1 mS/μm (Vds=0.5 V) with 115 mV/decade (Vds=0.5 V) subthreshold swing has been reported2 in planar III-V MOSFETs using a gate recess etch through...
Diblock copolymer lithography followed by selective growth is used for the nanofabrication of InGaAs quantum dots (QDs) on InP substrate. Stronger photoluminescence intensity is observed when in-situ CBr4 etching is employed prior to QD growth.
We demonstrate a two-dimensional photonic crystal made of PECVD silicon carbide (SiC) at near-infrared wavelengths. Although the refractive index of SiC is lower than that of a conventional semiconductor such as GaAs or Si, we show that photonic crystals based sensors can be obtained in PECVD SiC. We fabricated photonic crystals experimentally having bandgaps of 200 nm, and estimated their sensitivity...
Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.
Study on using a process which was combined LIGA (Lithographie Galvanoformung Abformung) with etching to manufacture an optical film of an aspherical microlens array (A-MLA), which can improve the extraction efficiency of an OLED (Organic Light-Emitting Diode). The extraction efficiency of a current OLED is not high due to its total internal reflection, and the luminance is also lower because of the...
We describe a novel aberration free etched diffraction grating on SOI platform for on chip wavelength multiplexing and demultiplexing. Initial fabrication with 1 micron slit gives 200 GHz channel pass band with < 0.2 mm2 chip size.
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