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We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the...
Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters.
The manuscript presents a comparison between nonlinear and linear de-embedding procedures for the identification of the I/V dynamic characteristics at the transistor current-generator plane. These approaches, without the need for modeling device trapping and thermal effects, allow to retrieving the waveforms of the electrical quantities at the current generator that governs device performance in terms...
A comparison between two different, yet analytical approaches for lookup-table large-signal model construction is presented in this study. Both approaches use the same linear (small-signal) model as the starting point to construct the large-signal model. The first nonlinear model employs the charge- and current-sources to represent the nonlinearity of the active part of the device where the extended...
The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few...
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