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In this work the low-frequency dispersion affecting active devices is experimentally characterized by performing on-wafer vector large-signal measurements at different substrate temperatures. As a result, the influence of the thermal effects and traps can be clearly highlighted under different operating frequencies. Particularly, active load pull measurements are performed both at low- and high-frequency...
In this work a de-embedding technique oriented to the determination of FET I-V dynamic characteristics is reported. It exploits high-frequency large-signal measurements and a model based description of the reactive nonlinearities. The proposed technique allows one to gather information about the intrinsic I-V dynamics, including traps related dispersion and thermal phenomena, directly from high-frequency...
The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few...
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