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Using the SLID-ICV technology from Fraunhofer EMFT (‘Solid-liquid-InterDiffusion’ and ‘Inter Chip Vias’[l]) thin pixel sensors (75μm-150m) with 50μm χ 400μm pixel size are connected to the readout ASICs (ATLAS FE-I3). These technologies offer the possibility to construct pixel detectors for application in high energy physics (and elsewhere) with improved properties like smaller pixel size, less material,...
The presented R&D activity is focused on the development of a new detector for the upgrade of the ATLAS pixel system at SLHC at CERN, Geneva, employing thin pixel sensors together with a novel vertical integration technology. It consists of the Solid-Liquid-InterDiffusion (SLID) interconnection, which is an alternative to the standard solder bump-bonding, and Inter Chip Vias (ICV) for routing...
The production of the latest generation of fully depleted DEPFET active pixel sensors designed for the Belle-II experiment at KEK, Japan, is currently being finalized. For the first time a thinning technology based on SOI wafers finds now its application in a high energy physics experiment. The DEPFET (DEpleted P-channel FET) is a field effect transistor with an additional implant underneath the channel...
High energy physics experiments at future particle accelerators set very demanding requirements on the performance of sensors and readout electronics. In these applications, silicon pixel detectors have to integrate advanced functionalities in the pixel cell itself, such as amplification, filtering, discrimination, time stamping, zero suppression and analog-to-digital conversion. This paper discusses...
Single photon counting plays an essential role for a wide variety of applications, ranging from biomedical research to astronomy. In gamma-ray astronomy, the Cherenkov telescope MAGIC is used to detect Cherenkov photons generated in atmospheric air showers. Since the flux of Cherenkov photons from air showers is low, the development of new single photon detectors with high quantum efficiency is necessary...
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