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Chip area of power semiconductor devices is one of the key parameters to realize highly-efficient converters. In the case of MOSFETs, a larger chip area results in lower on-state resistance. However, switching loss and gate drive loss may become dominant due to increase in parasitic capacitances when the chip area is too large. Thus, the chip area must be determined adequately considering given operating...
We report on the measurement of interstrip parameters of p-type silicon strip sensors which we are developing in a large collaboration to be used in a future tracker for the LHC upgrade. We measure on test structures with about 1 cm long strips the interstrip resistance, interstrip capacitance (at 1 MHz) and punch-through protection both pre-rad and after irradiation with 70 MeV protons to a fluence...
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