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We present a terahertz camera working at 590 GHz at real-time frame-rates of 16 frames per second (fps). An array of 12×12 field-effect transistors has been fabricated in a 150-nm CMOS process and is used as the camera's image sensor. The averaged single-pixel noise-equivalent-power is 43 pW/√Hz, the voltage single-pixel responsivity is 340 V/W. For an effective power of 104 µW distributed over the...
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
This paper presents the design and test results of a computational radiation sensor system based on a single chip solution that can perform standalone gamma isotope identification. A low power sensor front end with a charge sensitive amplifier, an event driven analog-to-digital converter, and a dedicated microcontroller are integrated on the same chip to process and bin the isotope data from a NaI...
This paper presents the design and testing results of a computational radiation sensor. The design utilizes a dedicated microcontroller to perform computation and data aggregation on the sensor head to reduce the information bit rate. A low-power charge sensitive amplifier and ADC complete the design. The design was implemented in a 0.35 mum CMOS technology with field tests demonstrating the validity...
We report a CMOS-compatible embedded silicon-carbon (eSiC) source/drain stressor technology with NMOS performance enhancement. The integration includes up to 2.6% substitutional carbon (Csub) epitaxial Si:C and laser spike annealing (LSA) for increased Csub incorporation. 26% channel resistance (Rch) reduction and 11% Idlin-Ioff enhancement for 0.5% Csub and 60% Rch reduction for 2.2% Csub are demonstrated.
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