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BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1–4] are integrated in large (512 × 1024) arrays at 100% yield, and are successfully co-integrated together with Phase Change Memory (PCM). Numerous desirable attributes are demonstrated: the large currents (>200µA) needed for PCM, the bipolar operation required for high-performance RRAM, the single-target sputter deposition...
We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials [1–3]. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin Vm, ultra-low leakage (<10pA), and much higher endurance (>108) at high current densities. Using CMP, all-good...
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